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A double pulse measurement for an inductively loaded circuit controlled by the $\text{IGBT}$ switch is carried out to evaluate the reverse recovery characteristics of the diode, $\text{D}$, represented approximately as a piecewise linear plot of current vs time at diode turn-off. $L_{par}$ is a parasitic inductance due to the writing of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering $1, 2, 3$, or $4$) at which the $\text{IGBT}$ experiences the highest current stress is _________. 

    

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I(L)=I(S)+I(D)

=>I(S)=I(L)-I(D)

When I(S) will be maximum IGBT expriences the highest current stress, so I(D) must be -ve

At point 3 I(D) is -ve. So Currect answer is 3.
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