1 1 vote A double pulse measurement for an inductively loaded circuit controlled by the $\text{IGBT}$ switch is carried out to evaluate the reverse recovery characteristics of the diode, $\text{D}$, represented approximately as a piecewise linear plot of current vs time at diode turn-off. $L_{par}$ is a parasitic inductance due to the writing of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering $1, 2, 3$, or $4$) at which the $\text{IGBT}$ experiences the highest current stress is _________. Power Electronics gate2020-ee numerical-answers power-electronics electric-circuits + – go_editor 1.8k views answer comment Share Follow 0 reply Please log in or register to add a comment.
0 0 votes I(L)=I(S)+I(D) =>I(S)=I(L)-I(D) When I(S) will be maximum IGBT expriences the highest current stress, so I(D) must be -ve At point 3 I(D) is -ve. So Currect answer is 3. samim answered May 7, 2022 samim comment Share Follow 0 reply Please log in or register to add a comment.
