A double pulse measurement for an inductively loaded circuit controlled by the $\text{IGBT}$ switch is carried out to evaluate the reverse recovery characteristics of the diode, $\text{D}$, represented approximately as a piecewise linear plot of current vs time at diode turn-off. $L_{par}$ is a parasitic inductance due to the writing of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering $1, 2, 3$, or $4$) at which the $\text{IGBT}$ experiences the highest current stress is _________.