GO Electrical
0 votes

The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of $\text{+3 V}$ is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be $\text{+Q}$. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of $\text{Q}$ (absolute value in Coulombs, rounded off to the nearest integer) is___________

in new by (1.4k points)
edited by

Please log in or register to answer this question.

Welcome to GATE Overflow, Electrical, where you can ask questions and receive answers from other members of the community.

912 questions
38 answers
10 comments
27,216 users