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The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of $\text{+3 V}$ is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be $\text{+Q}$. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of $\text{Q}$ (absolute value in Coulombs, rounded off to the nearest integer) is___________

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