GO Electrical
0 votes

Given, $V_{gs}$ is the gate-source voltage, $V_{ds}$ is the drain source voltage, and $V_{th}$ is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

  1. $V_{gs}<V_{th};V_{ds}\geq V_{gs}-V_{th}$
  2. $V_{gs}>V_{th};V_{ds}\geq V_{gs}-V_{th}$
  3. $V_{gs}>V_{th};V_{ds}\leq V_{gs}-V_{th}$
  4. $V_{gs}<V_{th};V_{ds}\leq V_{gs}-V_{th}$
in new by (5.4k points)
edited by

Please log in or register to answer this question.

Answer:
Welcome to GATE Overflow, Electrical, where you can ask questions and receive answers from other members of the community.

847 questions
37 answers
10 comments
26,077 users